|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-MaxTM TO-264 APT66F60B2 APT66F60L D Single die FREDFET G S FEATURES * Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant TYPICAL APPLICATIONS * ZVS phase shifted and other full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive 1 Ratings 70 44 245 30 1845 33 Unit A V mJ A Thermal and Mechanical Characteristics Symbol PD RJC RCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 6.2 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1 MicrosemiWebsite-http://www.microsemi.com N*m -55 0.11 150 C 300 oz g in*lbf Rev B 04-2009 050-8173 Min Typ Max 1135 0.11 Unit W C/W Static Characteristics Symbol VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS TJ = 25C unless otherwise specified Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 33A VGS = VDS, ID = 2.5mA VDS = 600V VGS = 0V TJ = 25C TJ = 125C APT66F60B2_L Typ 0.57 0.075 4 -10 Max Unit V V/C V mV/C A nA Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Min 600 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current 2.5 0.09 5 250 1000 100 VGS = 30V Dynamic Characteristics Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf 4 TJ = 25C unless otherwise specified Test Conditions VDS = 50V, ID = 33A VGS = 0V, VDS = 25V f = 1MHz Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Min Typ 65 13190 135 1210 645 Max Unit S pF VGS = 0V, VDS = 0V to 400V 5 Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time VGS = 0 to 10V, ID = 33A, VDS = 300V Resistive Switching VDD = 400V, ID = 33A RG = 2.2 6 , VGG = 15V 335 330 70 140 75 85 225 70 nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD trr Qrr Irrm dv/dt Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min D Typ Max 70 Unit G S A 246 1.0 310 570 V ns C A 20 V/ns ISD = 33A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 33A 3 VDD = 100V diSD/dt = 100A/s TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 33A, di/dt 1000A/s, VDD = 400V, TJ = 125C 268 474 1.6 4.2 11.4 16.9 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 3.39mH, RG =25, IAS = 33A. 04-2009 Rev B 050-8173 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.28E-7/VDS^2 + 5.36E-8/VDS + 2.00E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT66F60B2_L 250 V GS 120 = 10V T = 125C J TJ = -55C V 200 ID, DRAIN CURRENT (A) ID, DRIAN CURRENT (A) 100 GS = 7&8V 80 6V 150 TJ = 25C 60 100 40 5.5V 50 TJ = 150C TJ = 125C 20 0 5V 4.5V 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0 NORMALIZED TO VGS = 10V @ 33A 250 VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 2.5 ID, DRAIN CURRENT (A) 200 2.0 150 TJ = -55C TJ = 25C TJ = 125C 1.5 100 1.0 0.5 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 120 50 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 10,000 Ciss 100 gfs, TRANSCONDUCTANCE TJ = -55C TJ = 25C TJ = 125C 80 C, CAPACITANCE (pF) 1000 Coss 100 Crss 60 40 20 0 10 0 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 80 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 ID = 33A 250 ISD, REVERSE DRAIN CURRENT (A) 200 VDS = 120V 10 VDS = 300V 150 TJ = 25C 8 6 VDS = 480V 100 TJ = 150C 4 2 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0 50 050-8173 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0 0 Rev B 04-2009 APT66F60B2_L 300 100 ID, DRAIN CURRENT (A) IDM 300 100 ID, DRAIN CURRENT (A) IDM 10 Rds(on) 13s 100s 1ms 10ms 100ms TJ = 125C TC = 75C DC line 10 Rds(on) TJ = 150C TC = 25C 13s 100s 1ms 10ms 1 1 Scaling for Different Case & Junction 100ms Temperatures: DC line ID = ID(T = 25C)*(TJ - TC)/125 0.1 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 0.1 C 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1 0.12 D = 0.9 ZJC, THERMAL IMPEDANCE (C/W) 0.10 0.08 0.7 0.06 0.5 Note: PDM t1 t2 0.04 0.3 SINGLE PULSE 0.1 0.05 t1 = Pulse Duration Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 0.02 0 10 -5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4 1.0 T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244) e3 100% Sn Plated Drain 20.80 (.819) 21.46 (.845) Drain 25.48 (1.003) 26.49 (1.043) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) Gate Drain Source 04-2009 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) 050-8173 Rev B Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
Price & Availability of APT66F60B2 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |